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Home - STR Software for Modeling of Crystal Growth, Epitaxy, and Semiconductor Devices
Home May 11, 2023 STR will participate in The Joint ISTDM-ICSI conference that will cover topical issues in the area of group IV materials and technology research, and will be held in Como, Italy, o...
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A new version includes new features for modeling of both epitaxy and bulk crystal growth.
Str-soft.com news digest
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4 years
A new version of Virtual Reactor is released. The key updates in VR 8.1 are as follows:
For the epitaxial editions:
A model of SiC doping by N2 has been implemented. The model assumes the dissociative Langmuir mechanism of the Nitrogen adsorption, accounting for the effect of N2 partial pressure, growth temperature, and the seed polytype and polarity.... -
4 years
A new version of crystal growth simulation software CGSim has been released. New options available in CGSim 20.1 are as follows:
Basic CGSim:
Settings of chemical model of GaN growth from solution are extended. -
4 years
STR has released a new version of crystal growth simulation software CGSim 20.0.
The main new features are below:
Advanced chemical model of SiC and GaN growth from solution and chemical model of Ky sapphire growth are available. -
4 years
On September 29 – October 4 STR will participate in International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 that will take place in Kyoto, Japan. We will have a booth (look for STR Japan). Come see us at the exhibition!
Research work involving modeling with VR-CVD SiC: “Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method” by Yuichiro Tokuda, Norihiro Hoshino, Hironari Kuno, Hideyuki Uehigashi, Takeshi Okamoto, Takahiro Kanda, Nobuyuki Ohya, Isaho Kamata and...
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