Home - STR Software for Modeling of Crystal Growth, Epitaxy, and Semic...

STR Soft. Home...

Read Str-soft.com news digest here: view the latest STR Soft articles and content updates right away or get to their most visited pages. Str-soft.com is not yet rated by Alexa. It seems that STR Soft content is notably popular in Russian Federation, as 34.3% of all users (5K visits per month) come from this country. We haven’t detected security issues or inappropriate content on Str-soft.com and thus you can safely use it. Str-soft.com is hosted with Google LLC (United States) and its basic language is English.

  • Content verdict: Safe
  • Website availability: Live
  • English language flagLanguage: English
  • Last check:
  • 489

    Visitors daily
  • 489

    Pageviews daily
  • 4

    Google PR
  • N/A

    Alexa rank

Str-soft.com news digest

  • 4 years

    Virtual Reactor 8.1 Released

    A new version of Virtual Reactor is released. The key updates in VR 8.1 are as follows:
    For the epitaxial editions:
    A model of SiC doping by N2 has been implemented. The model assumes the dissociative Langmuir mechanism of the Nitrogen adsorption, accounting for the effect of N2 partial pressure, growth temperature, and the seed polytype and polarity....

  • 4 years

    CGSim 20.1 Has Been Released.

    A new version of crystal growth simulation software CGSim has been released. New options available in CGSim 20.1 are as follows:
    Basic CGSim:
    Settings of chemical model of GaN growth from solution are extended.

  • 4 years

    CGSim 20.0 Has Been Released

    STR has released a new version of crystal growth simulation software CGSim 20.0.
    The main new features are below:
    Advanced chemical model of SiC and GaN growth from solution and chemical model of Ky sapphire growth are available.

  • 4 years

    ICSCRM 2019

    On September 29 – October 4 STR will participate in International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 that will take place in Kyoto, Japan. We will have a booth (look for STR Japan). Come see us at the exhibition!
    Research work involving modeling with VR-CVD SiC: “Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method” by Yuichiro Tokuda, Norihiro Hoshino, Hironari Kuno, Hideyuki Uehigashi, Takeshi Okamoto, Takahiro Kanda, Nobuyuki Ohya, Isaho Kamata and...

Domain history

Web host: Google LLC
Registrar: Tucows Domains Inc.
Registrant: REDACTED FOR PRIVACY
Updated: October 24, 2023
Expires: November 08, 2024
Created: November 08, 2007

Whois record

Safety scores

Trustworthiness

N/A

Child safety

N/A